| Processing material | Silicon | Silicon carbide |
| Processing rod diameter | 3~8inches | 6~12inches |
| Processing rod length | 400mm | 300mm |
| Ovality | ±0.02mm | ±0.01mm |
| Conicity | ±0.05mm | ±0.015mm |
| Diameter accuracy | ±0.05mm | ±0.05mm |
|
Surface roughness |
Ra≤1.2μm | Ra≤1.2μm |
| OF Width Head-Tail Deviation | ±0.5mm | ±0.1mm |
| Crystal Orientation Precision | ±10' | ±10' |
| V-NOTCH Depth | 1.00~1.25mm | 1.00~1.25mm |
| V-NOTCH Angle | 89°~93° | 89°~93° |
| Equipment overall power | 21kW | 20kW |
| Equipment weigth | 5t | 4.5t |
| Equipment size | 3800*1620*2150 | 3620*1800*2000 |
Can accommodate processing of 4-8 inch crystals
Processing Length0-500mm
Mitsubishi control system
Equipped with automatic lubrication system
Outer Circle Grinding
Measurement of Crystal Orientation Angle
Grinding of OF Surface
V-Notch Engraving
Surface Smoothness Ra0.8-1.00
Eccentricity 0.02/500mm
Taper ±0.05/500mm
Radial Precision ±10'
Silicon
LT/LN
Silicon Carbide
Gallium arsenide/indium phosphide
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